1. V. SHARMILA - Department of Electronics and Communications Engineering, Vignana Bharathi Institute of Technology,
Gathkesar, Telangana Hyderabad.
2. CH. KRANTHIREKHA - Department of Electronics and Communications Engineering, Vignana Bharathi Institute of Technology,
Gathkesar, Telangana Hyderabad.
3. S. POTHALAIAH - Department of Electronics and Communications Engineering, Vignana Bharathi Institute of Technology,
Gathkesar, Telangana Hyderabad.
4. SREERAMULA GANGOTHRI - Department of Electronics and Communications Engineering, Vignana Bharathi Institute Technology
Gathkesar, Telangana, India.
5. SUNKARI MANASA - Department of Electronics and Communications Engineering Vignana Bharathi Institute Technology
Gathkesar, Telangana, India.
6. KASHIREDDY ANKITHA - Department of Electronics and Communications Engineering, Vignana Bharathi Institute of Technology,
Gathkesar, Telangana Hyderabad.
A direct-coupled amplifier is a type of electronic amplifier where the output of one amplification stage is directly connected to the input of the next stage without the use of coupling capacitors or transformers. This direct connection allows both DC (direct current) and AC (alternating current) signals to pass from one stage to the next. In this paper A cascode amplifier is a two-stage amplifier configuration that combines a common emitter stage directly coupled to a common-base stage, eliminating the need for coupling capacitors. This paper reflects the advantages of using MOSFET Technology for direct coupled common emitter followed by common base amplifier where we try to apply parametric variations in the proposed work which directly reduces the leakage current and hence power consumption in CMOS Technology. In order to improve the circuit performance, we apply parametric variations in the directly coupled common source- common gate MOSFET. In this paper the proposed work shows reduction in leakage current, power consumption, threshold voltage reduction by using parametric variations and FinFET configuration.
Power consumption, Cascade amplifier, Parametric Variation, MOSFET, leakage current, power consumption, FinFET.